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中文摘要：
将Volterra级数用于分析工作于高频，含有源级负反馈电阻的CMOS跨导级的线性度，为了降低计算的复杂性，将CMOS跨导视为两个非线性子系统的级联，计算了跨导的IIP3。使用的MOS管模型考虑了短沟道效应、栅源电容、栅漏电容和输出电阻。并对仿真结果和计算结果进行了比较，测试结果验证了文中的结论。
英文摘要：
In this paper, the method of using Volterra series expansion to analyze the linearity of high frequency CMOS transconductance stage with source degeneration resistor is provided. In order to reduce the complexity of the analysis, the transconductance stage is treated as cascade connection of two nonlinear systems. The IIP3 （input referred third-order intercept point） of the transconductance stage is calculated. The MOS model used includes short-channel effects, gatesource capacitance, gate-drain capacitance, and output resistance. Comparison is made among analytical results, simulation results and measurement results.
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