中文摘要：

以SiH_4和O_2作为反应气体,利用电感耦合等离子体增强型化学气相淀积（ICPECVD）技术在100~200℃内制备了氧化硅薄膜,采用HF酸腐蚀速率法来表征其致密性,并通过正交试验设计的方法研究了射频功率、反应室压强和衬底温度三个关键工艺参数对氧化硅薄膜致密性的影响,并对结果进行了优化。实验数据的方差分析结果表明,影响氧化硅致密性的工艺参数主次顺序为衬底温度、射频功率和反应室压强,并得到了各因素对氧化硅致密性的影响趋势,同时讨论了其影响机理。最后得出了制备氧化硅薄膜的最优化工艺参数组合。

英文摘要：

With SiH_4 and O_2as the reaction gas,the silicon oxide films were prepared at 100-200 ℃ by inductively coupled plasma-enhanced chemical vapor deposition（ICPECVD）technology.The compactness of the silicon oxide films was characterized by the HF acid etching rate method.The influences of the three key process parameters including RF power,reaction chamber pressure and substrate temperature on the silicon oxide films compactness was investigated by the orthogonal experiment design method,and the experimental results were optimized.The variance analysis results of the experimental data show that the influence sequence on the compactness of the silicon oxide films presents as the substrate temperature,RF power and reaction chamber pressure.The influence trends of different factors on the compactness of the silicon oxide films were obtained and the influence mechanisms were discussed.Finally,the combination of the optimal process parameters for preparing silicon oxide films were obtained.