中文摘要：

选用SF6/O2混合气体对等离子体增强化学气相淀积（PECVD）法制备的碳化硅（Si C）薄膜进行了浅槽刻蚀,并通过正交试验设计方法,研究了感应耦合等离子体（ICP）刻蚀技术中反应室压强、偏压射频（BRF）功率、O2比例三个工艺参数对碳化硅薄膜刻蚀速率的影响及其显著性。实验结果表明：BRF功率对于刻蚀速率的影响具有高度显著性,各因素对刻蚀速率的影响程度依次为BRF功率〉反应室压强〉O2比例,并讨论了所选因素对碳化硅薄膜刻蚀速率的影响机理。

英文摘要：

SF6/ O2 gas mixture is selected to etch Si C films shallowly that are prepared by PECVD method and influence and significance of the inductively coupled plasma（ ICP） etching process parameters including reaction chamber pressure,bias RF（ BRF） power,O2 flow ratio are investigated by the orthogonal experiment design method. Experimental results show that influence of BRF power on etching rate is highly significant,influence degree sequence of each factor on etching rate of Si C films presents as BRF power,reaction chamber pressure,O2 flow ratio and discuss influence principle of different factors on etching rate of Si C films.