中文摘要：

通过高温烧结技术得到了总体尺寸为15 mm×15 mm×0.6 mm的低温共烧陶瓷（LTCC）转接基板,并通过丝网印刷方式将转接焊盘的图形转移到经过高温烧结的LTCC转接基板上,形成金凸点和互连线图形;同时利用MEMS工艺中的刻蚀、氧化、金属蒸发和静电键合等工艺制备出SOI高温压力敏感芯片,最后通过采用各向异性导电胶的装配方式将高温压力敏感芯片倒装焊接到氧化铝陶瓷基板上,对倒装封装的敏感芯片进行高温下的加压测试。高温压力测试结果表明,在220℃的高温环境下,0~600 kPa的测试压力范围内,传感器的输出电压-外部气压曲线呈现出良好的线性特征,线性范围大且迟滞性小,可望用于220℃恶劣环境下的压力测量。

英文摘要：

A low temperature co-fired ceramic（LTCC）transfer substrate with the overall size of15 mm×15 mm×0.6 mm was obtained by the high temperature sintering technology,and the pattern on the transfer bonding pad was transferred on the LTCC transfer substrate by the screen printing technology to form the gold bump and the interconnect pattern.Meanwhile,an SOI high temperature pressure sensitive chip was prepared by using the etching,oxidation,metal evaporation,electrostatic bonding in the micro-electro-mechanical system（MEMS）process.Finally,the high temperature pressure sensitive chip was flip-chip bonded on the alumina ceramic substrate by the assembly method of the anisotropic conductive adhesive,and the flip-chip bonded sensitive chip was tested under high temperature and pressure.The high temperature pressure test shows that at the high temperature of 220 ℃ and in the pressure range from0 kPa to 600 kPa,the output voltage versus the external pressure curve of the sensor shows a good linear characteristic,with a large linear range and small hysteresis,which can be expected to be used for pressure measurement under the harsh environment of 220 ℃.