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Impact of proton-radiation-induced spacer damage on the dc characteristics degradation in deep-submi
ISSN号:0021-8979
期刊名称:Journal of Applied Physics
时间:0
页码:-
相关项目:集成电路辐照效应与抗辐照技术研究
作者:
Shoubin Xue|Ru Huang|Pengfei Wang|Wenhua Wang|Dake Wu|Yunpeng Pei|Xing Zhang|
同期刊论文项目
集成电路辐照效应与抗辐照技术研究
期刊论文 61
会议论文 18
专利 19
同项目期刊论文
Supply Voltage Scaled Dependency of the Recovery of Single Event Upset in Advanced CMOS SRAM Cells
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A New Model for Radiation Induced Off-State Leakage Current in NMOS Transistors
Impact of the displacement in channel and source/drain regions on the DC characteristics degradation
Temperature and Drain Bias Dependence of Single Event Transient in 25 nm FinFET Technology
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Charge Collection of Single Event Effects at Bragg’s Peak
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Hot Carrier Effects of SOI NMOS
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180nm CMOS工艺下SEL敏感性关键影响因素研究
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Temperature Dependence of Single Event Transient in 90 nm CMOS Dual-well and Triple-well Technology
Novel N-hit single event transient mitigation technique via open guard transistor in 65nm bulk CMOS
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Multiple Node Upset in SEU Hardened Storage Cells
Effect of p-well contact on n-well potential modulation in a 90nm bulk technology
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Novel Layout Technique for N-hit Single-Event Transient Mitigation via Source-Extension
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Impact of Circuit Placement on Single Event Transients in 65 nm Bulk CMOS Technology
NBTI效应导致SET脉冲在产生与传播过程中的展宽
p型金属氧化物半导体场效应晶体管界面态的积累对单粒子电荷共享收集的影响
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90nm CMOS工艺下p^+深阱掺杂浓度对电荷共享的影响
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A radiation-hardened-by-design technique for improving single-event transient tolerance of charge pumps in PLLs