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超陡倒掺杂分布对超深亚微米金属-氧化物-半导体器件总剂量辐照特性的改善
  • ISSN号：1000-3290
  • 期刊名称：物理学报
  • 时间：0
  • 页码：1964-1970
  • 语言：中文
  • 分类：TN386.1[电子电信—物理电子学]
  • 作者机构：[1]北京大学微电子学深圳研究院,集成微系统重点实验室,北京100871, [2]长春理工大学微电子系,长春130022
  • 相关基金：国家自然科学基金（批准号：60836004 60625403）; 国家重点基础研究发展计划（973）项目（批准号：2006CB302701）资助的课题
  • 相关项目：集成电路工艺研究（包括ＣＡＭ）
作者： 鲁庆|黄如|安霞|王思浩|王文华|
关键词： 总剂量效应, 超陡倒掺杂, 泄漏电流, 抗辐射加固., TID effects, delta doping, leakage current, radiation hardeness
中文摘要：

分析了沟道中超陡倒掺杂和均匀掺杂两种情况下超深亚微米MOS器件的总剂量辐照特性,主要比较了两种掺杂分布的器件在辐照情况下的泄漏电流与阈值电压的退化特性.结果表明,在辐照剂量〈500krad情况下,超陡倒掺杂器件的泄漏电流比均匀掺杂器件的泄漏电流低2—3个量级;而在辐照剂量〉500krad情况下,由于器件俘获的空穴量饱和,超陡倒掺杂的改善没有那么明显.但超陡倒掺杂的阈值电压漂移量比均匀掺杂的情况小约40mV.超陡倒掺杂有利于改善器件的总剂量辐照特性.文中还给出了用于改善器件辐照特性的超陡倒掺杂分布的优化设计,为超深亚微米器件抗辐照加固提供了依据.

英文摘要：

Total ionizing dose （TID） effects of the deep submicron MOSFET （metal oxide semiconductor field effect transistor） with delta doping profiles and uniform doping profiles in the channel region are analyzed in this paper. The influence of both doping profiles on the leakage current and threshold voltage is investigated. The results show that, the leakage current of MOSFET with delta doping profile is 2—3 orders lower than that with the uniform doping profile when the radiation dose is lower than 500 krad. Yet when the radiation dose is higher than 500 krad, the delta doping profile dose not show significant improvement compared with uniform doping profile as the trapped holes in the MOSFET saturate. But the threshold voltage shift is about 40 mV less than that with the uniform doping profile. Therefore, the TID effects of the deep submicron MOSFET can be improved by adopting the delta doping profile. The optimization of the delta-doping profile to further improve the TID effects is also given in this paper, which provides the guideline for the radiation hardened design.

同期刊论文项目
集成电路辐照效应与抗辐照技术研究
期刊论文 61 会议论文 18 专利 19
集成电路工艺研究（包括ＣＡＭ）
期刊论文 55 会议论文 53 获奖 2 专利 35
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期刊信息
  • 《物理学报》
  • 北大核心期刊（2011版）
  • 主管单位:中国科学院
  • 主办单位:中国物理学会 中国科学院物理研究所
  • 主编：欧阳钟灿
  • 地址：北京603信箱(中国科学院物理研究所)
  • 邮编：100190
  • 邮箱：apsoffice@iphy.ac.cn
  • 电话：010-82649026
  • 国际标准刊号：ISSN：1000-3290
  • 国内统一刊号：ISSN：11-1958/O4
  • 邮发代号:2-425
  • 获奖情况:
  • 1999年首届国家期刊奖,2000年中科院优秀期刊特等奖,2001年科技期刊最高方阵队双高期刊居中国期刊第12位
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  • 被引量:49876