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Investigation of the off-state behavior in deep-submicrometer NMOSFETs under heavy ion irradiation b
  • ISSN号：1530-4388
  • 期刊名称：Ieee Transactions On Device and Materials Reliabil
  • 时间：0
  • 页码：13-18
  • 相关项目：集成电路辐照效应与抗辐照技术研究
作者： Shoubin Xue|Pengfei Wang|Ru Huang|Xing Zhang|
同期刊论文项目
集成电路辐照效应与抗辐照技术研究
期刊论文 61 会议论文 18 专利 19
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