欢迎您!
东篱公司
退出
申报数据库
申报指南
立项数据库
成果数据库
期刊论文
会议论文
著 作
专 利
项目获奖数据库
位置:
成果数据库
>
期刊
> 期刊详情页
Impact of the displacement in channel and source/drain regions on the DC characteristics degradation
ISSN号:1674-1056
期刊名称:Chinese Physics B
时间:0
页码:-
相关项目:集成电路辐照效应与抗辐照技术研究
作者:
Xue Shoubin|Huang Ru|Huang Detao|Wang Sihao|Tan Fei|Wang Jian|An Xia|Zhang Xing|
同期刊论文项目
集成电路辐照效应与抗辐照技术研究
期刊论文 61
会议论文 18
专利 19
同项目期刊论文
Supply Voltage Scaled Dependency of the Recovery of Single Event Upset in Advanced CMOS SRAM Cells
A novel layout for single event upset mitigation in advanced CMOS SRAM cells
New Insight into the Parasitic Bipolar Amplification Effect in Single Event Transient Production
The Modeling to Predict the Time Evolution of NBTI Induced Single Event Transient Pulse Broadening
25 nm鱼鳍型场效应晶体管中单粒子瞬态的工艺参数相关性研究
Impact of proton-radiation-induced spacer damage on the dc characteristics degradation in deep-submi
一款0.18μm CMOS 辐射加固差分压控振荡器
A New Model for Radiation Induced Off-State Leakage Current in NMOS Transistors
Temperature and Drain Bias Dependence of Single Event Transient in 25 nm FinFET Technology
The Recovery of Single Event Upset in Advanced CMOS SRAM Cells
锁相环电路中压控振荡器的SET 响应研究
Charge Collection of Single Event Effects at Bragg’s Peak
超陡倒掺杂分布对超深亚微MOS器件总剂量辐照特性的改善
Hot Carrier Effects of SOI NMOS
单粒子瞬变中的双极放大效应研究
180nm CMOS工艺下SEL敏感性关键影响因素研究
90纳米CMOS双阱工艺下P+深阱掺杂对电荷共享的影响
Total Ionizing Dose Effects of Novel Vertical Channel Double Gate nMOSFETs
The Effect of Re-Convergence on SER Estimation
差分压控振荡器中单粒子瞬变的研究
Temperature dependence of charge sharing and MBU sensitivity induced by a heavy ion
超陡倒掺杂分布对超深亚微米金属-氧化物-半导体器件总剂量辐照特性的改善
高可靠锁相环设计技术研究
Temperature Dependency of Charge Sharing and MBU Sensitivity in 130nm CMOS Technology
Temperature Dependence of Single Event Transient in 90 nm CMOS Dual-well and Triple-well Technology
Novel N-hit single event transient mitigation technique via open guard transistor in 65nm bulk CMOS
Investigation of the off-state behavior in deep-submicrometer NMOSFETs under heavy ion irradiation b
Multiple Node Upset in SEU Hardened Storage Cells
Effect of p-well contact on n-well potential modulation in a 90nm bulk technology
Temperature Dependence of P-hit Single Event Transient Pulse Width in Three Transistors Inverter Cha
Modeling and analysis of single-event transients in charge pumps
Single Event Transient Pulse Attenuation Effect in Three Transistor Inverter Chain
一种基于混合模拟的计算组合电路中软错误率的方法与工具
Novel Layout Technique for N-hit Single-Event Transient Mitigation via Source-Extension
A-Z-A型石墨稀场效应晶体管吸附效应的第一性原理研究
Impact of Circuit Placement on Single Event Transients in 65 nm Bulk CMOS Technology
NBTI效应导致SET脉冲在产生与传播过程中的展宽
p型金属氧化物半导体场效应晶体管界面态的积累对单粒子电荷共享收集的影响
带有n^+深阱的三阱CMoS工艺中寄生NPN双极效应及其对电荷共享的影响
90nm CMOS工艺下p^+深阱掺杂浓度对电荷共享的影响
A-Z-A型石墨烯场效应晶体管吸附效应的第一性原理研究
A radiation-hardened-by-design technique for improving single-event transient tolerance of charge pumps in PLLs
期刊信息
《中国物理B:英文版》
中国科技核心期刊
主管单位:中国科学院
主办单位:中国物理学会和中国科学院物理研究所
主编:欧阳钟灿
地址:北京 中关村 中国科学院物理研究所内
邮编:100080
邮箱:
电话:010-82649026 82649519
国际标准刊号:ISSN:1674-1056
国内统一刊号:ISSN:11-5639/O4
邮发代号:
获奖情况:
国内外数据库收录:
被引量:406