位置：成果数据库 > 期刊 > 期刊详情页
p型金属氧化物半导体场效应晶体管界面态的积累对单粒子电荷共享收集的影响
  • ISSN号：1000-3290
  • 期刊名称：Acta Physica Sinica
  • 时间：2011.8.8
  • 页码：515-523
  • 分类：TN386.1[电子电信—物理电子学]
  • 作者机构：[1]国防科学技术大学计算机学院,长沙410073
  • 相关基金：国家自然科学基金重点项目（批准号：60836004）和国家自然科学基金（批准号：61006070）资助的课题
  • 相关项目：纳米级集成电路SET软错误率分析技术研究
作者： 陈建军|陈书明|梁斌|刘必慰|池雅庆|秦军瑞|何益百|Chen Jian-Jun Chen Shu-Ming Liang Bin Liu Bi-Wei C|
关键词： 负偏置温度不稳定性, 电荷共享收集, 双极放大效应, 单粒子多瞬态, negative bias temperature instability, charge sharing collection, bipolar amplification effect, single event multiple transient
中文摘要：

由于负偏置温度不稳定性和热载流子注入,p型金属氧化物半导体场效应晶体管（pMOSFET）将在工作中不断退化,而其SiO2/Si界面处界面态的积累是导致其退化的主要原因之一.采用三维器件数值模拟方法,基于130nm体硅工艺,研究了界面态的积累对相邻pMOSFET之间单粒子电荷共享收集的影响.研究发现,随着pMOSFETSiO2/Si界面处界面态的积累,相邻pMOSFET漏端的单粒子电荷共享收集量均减少.还研究了界面态的积累对相邻反相器中单粒子电荷共享收集所导致的多瞬态脉冲的影响.研究发现,随着pMOSFETSiO2/Si界面处界面态的积累,pMOSFET之间电荷共享收集所导致的多瞬态脉冲压缩,而n型金属氧化物半导体场效应晶体管之间电荷共享收集所导致的多瞬态脉冲展宽.

英文摘要：

Due to negative bias temperature instability and hot carrier injection,p-type metal-oxide-semiconductor field effect transistor （MOSFET） will degrade with time,and the accumulation of interface traps is one major reason for the degradation.In this paper,the influence of the accumulation of pMOSFET interface traps on single event charge sharing collection between two adjacent pMOSFET is studied based on three-dimensional numerical simulations on a 130 nm bulk silicon complementary metal-oxide-semiconductor process,the results show that with the accumulated interface traps increasing,the charge sharing collection reducs for both the two pMOSFETs.The influence of the accumulation of pMOSFET interface traps on single event charge sharing induced multiple transient pulses between two adjacent inverters is also studied,the results show that the multiple transient pulses induced by the two pMOSFET charge sharings will be compressed,while multiple transient pulses induced by the two nMOSFET charge sharing will be broadened.

同期刊论文项目
集成电路辐照效应与抗辐照技术研究
期刊论文 61 会议论文 18 专利 19
纳米级集成电路SET软错误率分析技术研究
期刊论文 32 会议论文 3 专利 12
同项目期刊论文
Voltage Dependency of Propagating Single-Event Transient Pulse Widths in 90 nm CMOS Technology
Novel N-hit single event transient mitigation technique via open guard transistor in 65 nm bulk CMOS
Charge collection of single event effects at Bragg';s peak
90nm CMOS工艺下p~+深阱掺杂浓度对电荷共享的影响
90纳米CMOS双阱工艺下STI深度对电荷共享的影响
180nm CMOS工艺下SEL敏感性关键影响因素
Simulation Study of the Layout Technique for P-hit Single-Event Transient Mitigation via the Source
Device-physics-based analytical model for SET pulse in sub-100 nm bulk CMOS Process
The modulation effect of substrate doping on multi-node charge collection and single-event transient
A Layout-Level Approach to Evaluate and Mitigate the Sensitive Areas of Multiple SETs in Combination
A Constrained Layout Placement Approach to Enhance Pulse Quenching Effect in Large Combinational Cir
基于DICE单元的抗SEU加固SRAM设计
Research on single event transient pulse quenching effect in 90 nm CMOS technology
NBTI效应导致SET脉冲在产生与传播过程中的展宽
Impact of pulse quenching effect on soft error vulnerabilities in combinational circuits based on st
带有n+深阱的三阱CMoS工艺中寄生NPN双极效应及其对电荷共享的影响
带有n^＋深阱的三阱CMoS工艺中寄生NPN双极效应及其对电荷共享的影响
90nm CMOS工艺下p^＋深阱掺杂浓度对电荷共享的影响
A-Z-A型石墨烯场效应晶体管吸附效应的第一性原理研究
Supply Voltage Scaled Dependency of the Recovery of Single Event Upset in Advanced CMOS SRAM Cells
A novel layout for single event upset mitigation in advanced CMOS SRAM cells
New Insight into the Parasitic Bipolar Amplification Effect in Single Event Transient Production
The Modeling to Predict the Time Evolution of NBTI Induced Single Event Transient Pulse Broadening
25 nm鱼鳍型场效应晶体管中单粒子瞬态的工艺参数相关性研究
Impact of proton-radiation-induced spacer damage on the dc characteristics degradation in deep-submi
一款0.18μm CMOS 辐射加固差分压控振荡器
A New Model for Radiation Induced Off-State Leakage Current in NMOS Transistors
Impact of the displacement in channel and source/drain regions on the DC characteristics degradation
Temperature and Drain Bias Dependence of Single Event Transient in 25 nm FinFET Technology
The Recovery of Single Event Upset in Advanced CMOS SRAM Cells
锁相环电路中压控振荡器的SET 响应研究
Charge Collection of Single Event Effects at Bragg’s Peak
超陡倒掺杂分布对超深亚微MOS器件总剂量辐照特性的改善
Hot Carrier Effects of SOI NMOS
单粒子瞬变中的双极放大效应研究
180nm CMOS工艺下SEL敏感性关键影响因素研究
90纳米CMOS双阱工艺下P+深阱掺杂对电荷共享的影响
Total Ionizing Dose Effects of Novel Vertical Channel Double Gate nMOSFETs
The Effect of Re-Convergence on SER Estimation
差分压控振荡器中单粒子瞬变的研究
Temperature dependence of charge sharing and MBU sensitivity induced by a heavy ion
超陡倒掺杂分布对超深亚微米金属-氧化物-半导体器件总剂量辐照特性的改善
高可靠锁相环设计技术研究
Temperature Dependency of Charge Sharing and MBU Sensitivity in 130nm CMOS Technology
Temperature Dependence of Single Event Transient in 90 nm CMOS Dual-well and Triple-well Technology
Novel N-hit single event transient mitigation technique via open guard transistor in 65nm bulk CMOS
Investigation of the off-state behavior in deep-submicrometer NMOSFETs under heavy ion irradiation b
Multiple Node Upset in SEU Hardened Storage Cells
Effect of p-well contact on n-well potential modulation in a 90nm bulk technology
Temperature Dependence of P-hit Single Event Transient Pulse Width in Three Transistors Inverter Cha
Modeling and analysis of single-event transients in charge pumps
Single Event Transient Pulse Attenuation Effect in Three Transistor Inverter Chain
一种基于混合模拟的计算组合电路中软错误率的方法与工具
Novel Layout Technique for N-hit Single-Event Transient Mitigation via Source-Extension
A-Z-A型石墨稀场效应晶体管吸附效应的第一性原理研究
Impact of Circuit Placement on Single Event Transients in 65 nm Bulk CMOS Technology
NBTI效应导致SET脉冲在产生与传播过程中的展宽
带有n^＋深阱的三阱CMoS工艺中寄生NPN双极效应及其对电荷共享的影响
90nm CMOS工艺下p^＋深阱掺杂浓度对电荷共享的影响
A-Z-A型石墨烯场效应晶体管吸附效应的第一性原理研究
A radiation-hardened-by-design technique for improving single-event transient tolerance of charge pumps in PLLs
期刊信息
  • 《物理学报》
  • 北大核心期刊（2011版）
  • 主管单位:中国科学院
  • 主办单位:中国物理学会 中国科学院物理研究所
  • 主编：欧阳钟灿
  • 地址：北京603信箱(中国科学院物理研究所)
  • 邮编：100190
  • 邮箱：apsoffice@iphy.ac.cn
  • 电话：010-82649026
  • 国际标准刊号：ISSN：1000-3290
  • 国内统一刊号：ISSN：11-1958/O4
  • 邮发代号:2-425
  • 获奖情况:
  • 1999年首届国家期刊奖,2000年中科院优秀期刊特等奖,2001年科技期刊最高方阵队双高期刊居中国期刊第12位
  • 国内外数据库收录:
  • 美国化学文摘（网络版）,荷兰文摘与引文数据库,美国工程索引,美国科学引文索引（扩展库）,英国科学文摘数据库,日本日本科学技术振兴机构数据库,中国中国科技核心期刊,中国北大核心期刊（2004版）,中国北大核心期刊（2008版）,中国北大核心期刊（2011版）,中国北大核心期刊（2014版）,中国北大核心期刊（2000版）
  • 被引量:49876