合成了2-甲基-8-羟基喹啉镓配合物(Ga(mhq)3),通过红外光谱、氢核磁谱确认其结构,进一步通过紫外-可见吸收光谱、循环伏安曲线、荧光发射光谱和电致发光光谱表征了其光学带隙及发光性质。实验结果表明Ga(mhq)3紫外吸收峰在259和365nm处,由紫外吸收得到光学带隙为3.10eV。在四氢呋喃溶液中,416nm激发下,荧光发射峰在496nm,为蓝绿色荧光;在360nm波长的激发下,Ga(mhq)3粉末发射峰在472nm处,属蓝绿光发射。将其做成器件A:ITO/NPB(50nm)/Ga(mhq)3(30nm)/LiF(1nm)/Al(100nm),得到最大亮度为901.5cd/m2,最大发射波长为508nm。加入电子传输层Alq3对器件A进行优化后,最大亮度达到4339cd/m2。
8-Hydroxy-2-methylquinoline gallium(Ga(mhq)3) was synthesized,and its molecular structure was characterized by FT-IR spectrometry and 1H NMR techniques.Its optical gap and photocurrent properties were investigated by UV-Vis absorption spectrometry,cyclic voltammetry,fluorescent emission spectrometry and electroluminescent spectrometry.Experimental results show that its optical gap is about 3.10 eV,as determined from its UV-Vis absorption edge.Its UV absorption bands were at 259 and 365 nm.Ga(mhq)3 emitted intensive blue-green fluorescence at peak wavelength of 496 and 472 nm in THF solution and powder state,respectively.Finally,devices using Ga(mhq)3 as the emissive layer were fabricated and investigated.The device A with configuration of ITO/NPB(50nm)/Ga(mhq)3(30nm)/LiF(1nm)/Al(100nm) showed maximum emission peak at 508nm and the maximum brightness of 901.5 cd/m2,after optimization by introducing electron-transporting material Alq3,brightness can reach 4339cd/m2.