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Full well capacity and quantum efficiency optimization for small size backside illuminated CMOS image pixels with a new photodiode structure
  • ISSN号：1674-4926
  • 期刊名称：《半导体学报：英文版》
  • 时间：0
  • 分类：TN364.2[电子电信—物理电子学] TP212[自动化与计算机技术—控制科学与工程;自动化与计算机技术—检测技术与自动化装置]
  • 作者机构：[1]School of Electronic Information Engineering, Tianjin University, Tianjin 300072, China
  • 相关基金：Project supported by the National Natural Science Foundation of China （Nos. 61036004, 60976030）.
作者： Sun Yu Zhang Ping Xu Jiangtao Gao Zhiyuan Xu Chao[1]
关键词： CMOS图像传感器, 光电二极管, 图像像素, 效率优化, 量子效率, 管结构, 小尺寸, 容量, backside illuminated CMOS image sensor, photodiode, full well capacity, quantum efficiency, small size pixel
中文摘要：

Corresponding author. Email： xujiangtao@tju.edu.cn

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期刊信息
  • 《半导体学报：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国电子学会 中国科学院半导体研究所
  • 主编：李树深
  • 地址：北京912信箱
  • 邮编：100083
  • 邮箱：cjs@semi.ac.cn
  • 电话：010-82304277
  • 国际标准刊号：ISSN：1674-4926
  • 国内统一刊号：ISSN：11-5781/TN
  • 邮发代号:2-184
  • 获奖情况:
  • 90年获中科院优秀期刊二等奖,92年获国家科委、中共中央宣传部和国家新闻出版署...,97年国家科委、中共中央中宣传部和国家新出版署三等奖,中国期刊方阵“双效”期刊
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  • 俄罗斯文摘杂志,美国化学文摘（网络版）,荷兰文摘与引文数据库,美国工程索引,美国剑桥科学文摘,英国科学文摘数据库,日本日本科学技术振兴机构数据库,中国中国科技核心期刊,中国北大核心期刊（2004版）,中国北大核心期刊（2008版）,英国英国皇家化学学会文摘,中国北大核心期刊（2000版）
  • 被引量:7754