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一种基于亚阈值MOS低电压基准源单元电路的设计
  • 期刊名称:电力学报,2008.23(2):81-83
  • 时间:0
  • 分类:TN01[电子电信—物理电子学]
  • 作者机构:[1]武汉大学电气工程学院,武汉430072
  • 相关基金:国家自然科学基金项目资助(50577046)
  • 相关项目:多端口归一化模拟单元电路导出与实现方法研究
中文摘要:

电压基准作为一个基本的单元电路,在很多电路设计中都占有极其重要的地位。为了满足新型微电子产品对电压基准提出的更高要求,提出了一种基于亚阈值MOS的低电压基准源单元电路,该基准源单元电路采用TSMC0.35μm工艺设计,具有较低的工作电压1.5V,输出电压基准低达264.5mV,仿真验证该基准源单元电路温度系数为36ppm/C,具有较好的温度系数。对此类器件的设计和研发具有重要意义。

英文摘要:

As a basic unit-circuit,voltage reference is essential in many circuits. To meet the even higher reguirements of new types of microelectronic products for voltage reference,a unitcircuit of low-voltage reference source based on sub-threshold MOS has been developed. This circuit is designed with TSMC 0.35 μm technology and has a lower working-voltage of 1.5 V. And its output voltage reference can be as low as 264. 5 mV. Simulation tests prove that its temperature index is 36 ppm/C, which is a good figure. It is significant in the design and development of this type of apparatus.

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