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Hillock formation and suppression on c-plane homoepitaxial GaN Layers grown by metalorganic vapor ph
  • ISSN号：0022-0248
  • 期刊名称：Journal of Crystal Growth
  • 时间：2013.5.5
  • 页码：7-10
  • 相关项目：大功率InGaN基LED新型外延结构研究
作者： Hui Yang|Jianping Liu|Shuming Zhang|Zengcheng Li|Meixin Feng|Deyao Li|Liqun Zhang|Feng Wang|Jianjun Zhu|
同期刊论文项目
大功率InGaN基LED新型外延结构研究
期刊论文 16 专利 3
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