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Thermal analysis of GaN laser diodes in a package structure
  • ISSN号：1674-1056
  • 期刊名称：Chinese Physics B
  • 时间：2012.8.8
  • 页码：084209-
  • 相关项目：大功率InGaN基LED新型外延结构研究
作者： Yang Hui|Zhang Shu-Ming|Jiang De-Sheng|Liu Jian-Ping|Wang Hui|Zeng Chang|Li Zeng-Cheng|Wang Huai-Bing|Wang Feng|
同期刊论文项目
大功率InGaN基LED新型外延结构研究
期刊论文 16 专利 3
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Thermal characterization of GaN-based laser diodes by forward-voltage method
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Thermal analysis of GaN laser diodes in a package structure
期刊信息
  • 《中国物理B：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国物理学会和中国科学院物理研究所
  • 主编：欧阳钟灿
  • 地址：北京 中关村 中国科学院物理研究所内
  • 邮编：100080
  • 邮箱：
  • 电话：010-82649026 82649519
  • 国际标准刊号：ISSN：1674-1056
  • 国内统一刊号：ISSN：11-5639/O4
  • 邮发代号:
  • 获奖情况:
  • 国内外数据库收录:
  • 被引量:406