位置：成果数据库 > 期刊 > 期刊详情页
Effects of matrix layer composition on the structural and optical properties of self-organized InGaN
  • ISSN号：0021-8979
  • 期刊名称：Journal of Applied Physics
  • 时间：2013.9.9
  • 页码：093105-1-093105-6
  • 相关项目：大功率InGaN基LED新型外延结构研究
作者： Yang, H.|Liu, J. P.|Feng, M. X.|Zhou, K.|Zhang, S. M.|Wang, H.|Li, D. Y.|Zhang, L. Q.|Sun, Q.|
同期刊论文项目
大功率InGaN基LED新型外延结构研究
期刊论文 16 专利 3
同项目期刊论文
Thermal analysis of GaN laser diodes in a package structure
High-efficiency InGaN-based LEDs grown on patterned sapphire substrates
Characteristics of InGaN-based superluminescent diodes with one-sided oblique cavity facet
Effect of Patterned Sapphire Substrate Shape on Light Output Power of GaN-Based LEDs
Hillock formation and suppression on c-plane homoepitaxial GaN Layers grown by metalorganic vapor ph
Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diode structures during
High efficient GaN-based laser diodes with tunnel junction
Performance Enhancement of GaN-Based Laser Diodes With Prestrained Growth
Saturation of the junction voltage in GaN-based laser diodes
Thermal characterization of GaN-based laser diodes by forward-voltage method
Design Considerations for GaN-Based Blue Laser Diodes With InGaN Upper Waveguide Layer
Optimization of the cavity facet coating in high power GaN-based semiconductor laser diodes
Thermal analysis of GaN laser diodes in a package structure