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High efficient GaN-based laser diodes with tunnel junction
  • ISSN号：0003-6951
  • 期刊名称：Applied Physics Letters
  • 时间：2013.7.7
  • 页码：043508-1-043508-4
  • 相关项目：大功率InGaN基LED新型外延结构研究
作者： Yang, H.|Liu, J. P.|Zhang, S. M.|Jiang, D. S.|Li, Z. C.|Zhou, K.|Li, D. Y.|Zhang, L. Q.|Wang, F.|
同期刊论文项目
大功率InGaN基LED新型外延结构研究
期刊论文 16 专利 3
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