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Optimization of the cavity facet coating in high power GaN-based semiconductor laser diodes
ISSN号:1674-7321
期刊名称:Science in China - Series E: Technological Science
时间:2012.4.4
页码:883-887
相关项目:大功率InGaN基LED新型外延结构研究
作者:
Yang Hui|Zhang ShuMing|Jiang DeSheng|Wang Hui|Liu JianPing|Zeng Chang|Li ZengCheng|Wang HuaiBing|Wang Feng|
同期刊论文项目
大功率InGaN基LED新型外延结构研究
期刊论文 16
专利 3
同项目期刊论文
Thermal analysis of GaN laser diodes in a package structure
High-efficiency InGaN-based LEDs grown on patterned sapphire substrates
Characteristics of InGaN-based superluminescent diodes with one-sided oblique cavity facet
Effect of Patterned Sapphire Substrate Shape on Light Output Power of GaN-Based LEDs
Hillock formation and suppression on c-plane homoepitaxial GaN Layers grown by metalorganic vapor ph
Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diode structures during
High efficient GaN-based laser diodes with tunnel junction
Effects of matrix layer composition on the structural and optical properties of self-organized InGaN
Performance Enhancement of GaN-Based Laser Diodes With Prestrained Growth
Saturation of the junction voltage in GaN-based laser diodes
Thermal characterization of GaN-based laser diodes by forward-voltage method
Design Considerations for GaN-Based Blue Laser Diodes With InGaN Upper Waveguide Layer
Thermal analysis of GaN laser diodes in a package structure