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Effect of Patterned Sapphire Substrate Shape on Light Output Power of GaN-Based LEDs
ISSN号:1041-1135
期刊名称:IEEE Photonics Technology Letters
时间:2011.7.7
页码:944-946
相关项目:大功率InGaN基LED新型外延结构研究
作者:
Huang, Xiao-Hui|Liu, Jian-Ping|Fan, Ya-Ying|Kong, Jun-Jie|Yang, Hui|Wang, Huai-Bing|
同期刊论文项目
大功率InGaN基LED新型外延结构研究
期刊论文 16
专利 3
同项目期刊论文
Thermal analysis of GaN laser diodes in a package structure
High-efficiency InGaN-based LEDs grown on patterned sapphire substrates
Characteristics of InGaN-based superluminescent diodes with one-sided oblique cavity facet
Hillock formation and suppression on c-plane homoepitaxial GaN Layers grown by metalorganic vapor ph
Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diode structures during
High efficient GaN-based laser diodes with tunnel junction
Effects of matrix layer composition on the structural and optical properties of self-organized InGaN
Performance Enhancement of GaN-Based Laser Diodes With Prestrained Growth
Saturation of the junction voltage in GaN-based laser diodes
Thermal characterization of GaN-based laser diodes by forward-voltage method
Design Considerations for GaN-Based Blue Laser Diodes With InGaN Upper Waveguide Layer
Optimization of the cavity facet coating in high power GaN-based semiconductor laser diodes
Thermal analysis of GaN laser diodes in a package structure