欢迎您！东篱公司
退出
-
申报数据库
-
立项数据库
-
成果数据库
-
项目获奖数据库
中文摘要：
针对40Gb／s高速过渡热沉阻抗匹配的要求，对基于Ta2N薄膜的匹配电阻制作工艺进行了系统研究．根据过渡热沉的等效电路模型，分析了Ta2N薄膜电阻与传输线电极间接触电阻对高频反射特性的影响，并通过理论仿真确定了热沉匹配电阻的容差范围．利用磁控反应溅射技术，制作出特性稳定、方阻可调的Ta2N电阻薄膜．通过优化高温退火条件，将电阻薄膜与金属电极间的比接触电阻率降至10^-6·Ωcm^2量级．在此基础上，制作出了性能良好稳定、可应用于40Gb／s光电子器件封装的高速过渡热沉．
英文摘要：
A systematic study of the fabrication process of Ta2N thin-film resistor was presented to meet the impedance matching requirement of 40Gb/s high-speed submount. Equivalent circuit of the submount was proposed to analyze the influence of contact resistance on the reflection characteristics at high frequencies. And the resistance tolerance of the thinfilm resistor was determined based on the numerical simulation. Ta2N thin-film with a stable and adjustable sheet resistance was fabricated by reactive sputtering. Specific contact resistivity between the Ta2N thin-film and metal electrode was reduced to 10-6 Ω· cm^2 by optimizing the annealing temperature. Based on these results, high-speed submount with stable and high transmission performance was fabricated for the packaging of 40Gb/s optoelectronic devices.
同期刊论文项目
同项目期刊论文
Influence of Master Laser's Lineshape on the Optically Generated Microwave Carrier by Injection Lock
Fabrication and Packaging of 40-Gb/s AlGaInAs Multiple-Quantum-Well Electroabsorption Modulated Lase
Resonance Suppression of Grounded Coplanar Waveguide in Submount for 40 Gb/s Optoelectronic Modules.
Enhancement of electron- longitudinal optical phonon coupling in highly strained InGaN/GaN quantum w
A Novel Multisection Distributed Feedback Laser with Varied Ridge Width for Self-Pulsation Generatio
Effect of p-n junction location on characteristics of InGaN/GaN multiple-quantum-well light-emitting
40 Gb/s AlGaInAs Electroabsorption Modulated Laser Module Based on Identical Epitaxial Layer Scheme.
40GHz AlGaInAs Multiple-Quantum-Well Integrated Electroabsorption Modulator/Distributed Feedback Las
Optimization of Multiple Quantum Well Electroabsorption Modulators Based on Transmission Performance
期刊信息
位置：