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Photoelectric properties of p--FeSi2/n-4H-SiC heterojunction near-infrared photodiode
  • ISSN号：1674-4926
  • 期刊名称：半导体学报
  • 时间：2015.5.1
  • 页码：054009-
  • 相关项目：基于Si/SiC异质结的非紫外光控SiC大功率电力电子器件可行性研究
作者： Zheng Chunlei|Pu Hongbin|Li Hong|Chen Zhiming|
同期刊论文项目
基于Si/SiC异质结的非紫外光控SiC大功率电力电子器件可行性研究
期刊论文 34 会议论文 15
同项目期刊论文
Investigation of micropipes in 6H-SiC by Raman scattering
Formation and evolution of micropipes in SiC crystals
Stacking faults at the boundary between 15R-and 4H-polytype in SiC
The epitaxial growth of (1 1 1) oriented monocrystalline Si film based on a 4:5 Si-to-SiC atomic lat
The 4:5 Si-to-SiC atomic lattice matching interfaces in the system of Si(111) heteroepitaxially grow
SiC籽晶表面状态对晶体质量的影响
PVT法生长SiC过程生长界面形状对热应力的影响
Interface-structure of the Si/SiC heterojunction grown on 6H-SiC
Non-UV Photoelectric Properties of the Ni/n-Si/N+-SiC Isotype Heterostructure Schottky Barrier Photo
Ni/n-Si/N+-SiC Heterostructure Schottky Barrier Photodiode Used in Non-ultraviolet Region
Preferential growth of Si films on 6H-SiC(0001) C-face
Lattice-matching of Si grown on 6H-SiC(000-1) C-face
Three-dimensional observation of defects in nitrogen-doped 6H-SiC crystals using a laser scanning co
Si( 100) 表面S 钝化效果与稳定性研究
6H-SiC硅面S钝化工艺研究
The epitaxial growth of (111) oriented monocrystalline Si film based on a 4:5 Si-to-SiC atomic latti
Electrical and photoelectric properties of p-Si/n(+)-6H-SiC heterojunction non-ultraviolet photodiod
Effect of growth gas flow rate on the SiC crystal resistivity
Simulation of near-infrared photodiode detectors based on beta-FeSi2/4H-SiC heterojunctions
TEM characterization of Si films grown on 6H-SiC (0001) C-face
First-principles study on Si(？220)/6H–SiC(0001) interface
β-FeSi2 films prepared on 6H-SiC substrates by magnetron sputtering
Relaxation of 6H-SiC (0001) surface and Siadsorption on 6H-SiC (0001): an ab initio study
First-principles calculations on atomic andelectronic properties of Si(111)/6H-SiC(0001) heterojunct
Atomic-scale characterization of Si(110)/6H-SiC(0001) heterostructure by HRTEM
First-principles calculations on Si (220) located 6H - SiC (1010) surface with different stacking si
6H-SiC衬底上多晶Si薄膜热壁CVD间隔生长与结构表征
Lattice-matching of Si grown on 6H–SiC(000？1) C-face
p(+)-Si/i-Si/n-SiC heterostructure photodiode used in visible region
First-principles study on Si(-220)/6H–SiC(0001) interface
Si（100）表面S钝化效果与稳定性研究
Photoelectric properties of p-β-FeSi2/n-4H-SiC heterojunction near-infrared photodiode
调制掺杂结构Si/SiC异质结的光电特性模拟
期刊信息
  • 《半导体学报：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国电子学会 中国科学院半导体研究所
  • 主编：李树深
  • 地址：北京912信箱
  • 邮编：100083
  • 邮箱：cjs@semi.ac.cn
  • 电话：010-82304277
  • 国际标准刊号：ISSN：1674-4926
  • 国内统一刊号：ISSN：11-5781/TN
  • 邮发代号:2-184
  • 获奖情况:
  • 90年获中科院优秀期刊二等奖,92年获国家科委、中共中央宣传部和国家新闻出版署...,97年国家科委、中共中央中宣传部和国家新出版署三等奖,中国期刊方阵“双效”期刊
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  • 被引量:7754