中文摘要：

基于Valence-Mending概念对Si（100）表面进行S钝化研究。对于Ni/n-Si肖特基接触,S钝化使其肖特基势垒高度向其理想势垒高度靠近了0.09 eV;对于Al/p-Si肖特基接触,S钝化使其肖特基势垒高度向其理想势垒高度靠近了0.08 eV。少子寿命测试结果表明S钝化使Si（100）表面少子寿命提高大约1个数量级;热稳定性实验结果表明560℃时S钝化效果退化;XPS测试结果表明S离子化学吸附在Si表面并形成Si-S键,样品在空气中放置一段时间后表面Si-S键被氧化,表明S钝化抗氧化性不强。

英文摘要：

Sulfur-passivation for Si（100） based on the concept of Valence-Mending has been investigated in this paper. Compared with the non-passivated samples,Schottky barrier height of Sulfur-passivated Ni / n-Si is 0. 09 eV closer to its ideal barrier height; Schottky barrier height of Sulfur-passivated Al /p-Si is 0. 08 eV closer to its ideal barrier height. The minority carrier lifetime results implied that the minority of carrier lifetime of Si（100） can be improved around 1 order of magnitude by sulfur-passivation. The thermal stability experiment indicated that the passivation effect is degenerated after annealing at 560 ℃.The XPS analyses indicated that S ions are chemically adsorpted on Si surface and form Si-S bonds. Si-S bonds of the passivated samples had been partially oxidized after placed in the air for several days. It indicated that the oxidation resistance of sulfur-passivation is not strong.