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6H-SiC衬底上多晶Si薄膜热壁CVD间隔生长与结构表征
  • ISSN号：1000-985X
  • 期刊名称：人工晶体学报
  • 时间：2014.8.15
  • 页码：1965-1969
  • 相关项目：基于Si/SiC异质结的非紫外光控SiC大功率电力电子器件可行性研究
作者： 陈治明|李连碧|赵萌|黄磊|
同期刊论文项目
基于Si/SiC异质结的非紫外光控SiC大功率电力电子器件可行性研究
期刊论文 34 会议论文 15
同项目期刊论文
Investigation of micropipes in 6H-SiC by Raman scattering
Formation and evolution of micropipes in SiC crystals
Stacking faults at the boundary between 15R-and 4H-polytype in SiC
The epitaxial growth of (1 1 1) oriented monocrystalline Si film based on a 4:5 Si-to-SiC atomic lat
The 4:5 Si-to-SiC atomic lattice matching interfaces in the system of Si(111) heteroepitaxially grow
SiC籽晶表面状态对晶体质量的影响
PVT法生长SiC过程生长界面形状对热应力的影响
Interface-structure of the Si/SiC heterojunction grown on 6H-SiC
Non-UV Photoelectric Properties of the Ni/n-Si/N+-SiC Isotype Heterostructure Schottky Barrier Photo
Ni/n-Si/N+-SiC Heterostructure Schottky Barrier Photodiode Used in Non-ultraviolet Region
Preferential growth of Si films on 6H-SiC(0001) C-face
Lattice-matching of Si grown on 6H-SiC(000-1) C-face
Three-dimensional observation of defects in nitrogen-doped 6H-SiC crystals using a laser scanning co
Si( 100) 表面S 钝化效果与稳定性研究
6H-SiC硅面S钝化工艺研究
The epitaxial growth of (111) oriented monocrystalline Si film based on a 4:5 Si-to-SiC atomic latti
Electrical and photoelectric properties of p-Si/n(+)-6H-SiC heterojunction non-ultraviolet photodiod
Effect of growth gas flow rate on the SiC crystal resistivity
Simulation of near-infrared photodiode detectors based on beta-FeSi2/4H-SiC heterojunctions
TEM characterization of Si films grown on 6H-SiC (0001) C-face
First-principles study on Si(？220)/6H–SiC(0001) interface
β-FeSi2 films prepared on 6H-SiC substrates by magnetron sputtering
Photoelectric properties of p--FeSi2/n-4H-SiC heterojunction near-infrared photodiode
Relaxation of 6H-SiC (0001) surface and Siadsorption on 6H-SiC (0001): an ab initio study
First-principles calculations on atomic andelectronic properties of Si(111)/6H-SiC(0001) heterojunct
Atomic-scale characterization of Si(110)/6H-SiC(0001) heterostructure by HRTEM
First-principles calculations on Si (220) located 6H - SiC (1010) surface with different stacking si
Lattice-matching of Si grown on 6H–SiC(000？1) C-face
p(+)-Si/i-Si/n-SiC heterostructure photodiode used in visible region
First-principles study on Si(-220)/6H–SiC(0001) interface
Si（100）表面S钝化效果与稳定性研究
Photoelectric properties of p-β-FeSi2/n-4H-SiC heterojunction near-infrared photodiode
调制掺杂结构Si/SiC异质结的光电特性模拟
期刊信息
  • 《人工晶体学报》
  • 中国科技核心期刊
  • 主管单位:中国建材工业协会
  • 主办单位:中国硅酸盐学会 晶体生长与材料专业委员会 中材人工晶体研究院
  • 主编：余明清
  • 地址：北京市733信箱
  • 邮编：100018
  • 邮箱：
  • 电话：010-65492963 65492968 65493320
  • 国际标准刊号：ISSN：1000-985X
  • 国内统一刊号：ISSN：11-2637/O7
  • 邮发代号:
  • 获奖情况:
  • 1997年获国家科技优秀期刊,获部级优秀科技期刊奖,中国期刊方阵“双效”期刊
  • 国内外数据库收录:
  • 美国化学文摘（网络版）,荷兰文摘与引文数据库,美国工程索引,日本日本科学技术振兴机构数据库,中国中国科技核心期刊,中国北大核心期刊（2004版）,中国北大核心期刊（2008版）,中国北大核心期刊（2011版）,中国北大核心期刊（2014版）,中国北大核心期刊（2000版）
  • 被引量:9943