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中文摘要：
根据ZnGeP2（ZGP）晶体的生长特性,自行设计组装了三段式独立控温生长炉,优化了温场分布。采用改进的垂直布里奇曼法成功生长出外观完整、无裂纹的ZGP单晶体,尺寸达φ15 mm×35 mm。对晶体进行解理实验和X射线衍射分析,发现ZGP晶体易沿（101）面解理,其回摆峰尖锐无劈裂。对未经退火处理的晶片进行红外透过率测试,在2-12μm波段内红外透过率达45%以上。研究结果表明所设计的温场适合于ZGP单晶生长,生长出的ZGP晶体完整性好、质量较高。
英文摘要：
A furnace with three independently-heating zones has been designed and built for ZnGeP2 （ZGP） crystal growth according to the characteristics of the crystal growth, and its temperature field was optimized to meet the need of ZGP crystal growth. A crack-free ZnGeP2 single crystal of φ15 mm×35 mm was grown successfully by modified vertical Bridgman method （VBM）. The XRD analysis and IR transmission analysis were carried out on ZGP single crystal. The XRD spectrum of { 101 }face was obtained, and the infrared transmission of a ZGP wafer is above 45% in the region of 2-12 μm. These results show the designed temperature field is suitable for growth of ZGP crystal, and the as-grown ZGP crystal has good structural integrity and high quality.
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