中文摘要：

根据晶体自发成核几何淘汰规律,结合ZnGeP2晶体的结晶习性,研究设计出生长完整ZnGeP2单晶体的双层镀碳石英安瓿,其关键技术参数为：安瓿长径比6～7,籽晶袋长度≥25mm,安瓿主体与籽晶袋之间的放肩角在25°左右。在上述生长安瓿中,采用改进的垂直布里奇曼法,分段控制下降速率,成功生长出尺寸为22mm×40mm的ZnGeP2单晶。对晶体进行X射线分析,获得（204）面单晶衍射谱和回摆谱,衍射峰峰形尖锐无劈裂,回摆谱对称性好,半峰宽为0.063°;晶片在2～12μm波段范围内的红外透过率达50%以上。实验结果表明,研究设计的生长安瓿适合于磷锗锌单晶生长,能够获得较高质量的单晶体。

英文摘要：

According to the rule of geometrical elimination of crystal＇s self-seeding,combining with crystalling habits of ZnGeP2,key technical parameters of double quartz ampoule for growing integral ZnGeP2 single crystals was presented as follows：ratio of length and inner diameter should be 6-7,length of seed pocket should be longer than 25 mm,shoulder angle between main body and seed pocket of ampoule should be about 25 °. ZnGeP2 single crystal,size of which is 22 mm in diameter and 40 mm in length,was grown successfully in the above mentioned ampoule by the modified Bridgman method and respectively controlling descending speed in different period of crystal growth. Diffraction spectrum and rocking spectrum of （ 204） face of the single crystal were obtained by XRD analysis. The peak is sharp and no split,and the rocking curve shows good symmetry,FWHM is 0. 063 °. The IR transmittance of ZnGeP2 wafer is above 50% from 2 μm to 12 μm. Those measuring results show that the new designed ampoule is suitable for the growth of higher quality ZnGeP2 single crystals.