利用高压方法制备了二元方钴矿结构热电材料CoSb3,采用X射线衍射(XRD)、扫描电镜(SEM)研究了CoSb3的物相组成及微观结构,并对其室温下的电学性质进行了研究.通过XRD测试发现高压方法能够快速(约20 min)制备出单相的CoSb3.SEM测试显示高压方法制备的样品晶粒细小且致密较高.室温下电学测试表明:随合成压力的升高,CoSb3的Seebeck系数增大,电导率减小.
Binary skutterudite compound CoSb3was prepared with high-pressure method.Single CoSb3phase could be obtained rapidly(~20 minute) with high pressure method,X-ray diffraction.The measurement of SEM shows that high pressure synthetic sample is polycrystal CoSb3 with fine grain size.With the increasing of synthetic pressure,the electrical conductivity of CoSb3 decreases while the Seebeck coefficient increases.