利用高温高压方法在2~5.0GPa和900K的合成条件下成功合成出系列立方相Sm填充型方钴矿化合物SmxCo4Sb12(z=0.2,0.6,0.8)体热电材料,并系统地研究了合成压力及不同的Sm填充分数对其室温下的电输运特性(电阻率、Seebeck系数、功率因子)的影响.研究结果表明,Sm填充型方钴矿化合物SmxCo4Sb12为n型半导体.在不同压力下,随着Sm填充分数的增加,Seebeck系数的绝对值和电阻率均呈现降低趋势.在2GPa,900K条件下合成的Sm0.8Co4Sb12化合物功率因子达到最大值5.88μw/(cm·K^2).
Sm-filled skutterudite compounds SmxCo4Sb12(x=0.2, 0.6, 0.8) were successfully synthesized at 2-5.0 GPa and 900 K. The XRD results indicate that all samples have the crystal structure of single phase CoSb3. The dependence of electric transport properties for SmxCo4 Sb12 samples on Sm filling fraction and pressure has been studied at room temperature. The Sm-filled skutterudite is n type semiconductor. The electrical resistivity and the absolute value of Seebeek coefficient decrease with the increasing of Sm filling fraction. The maximum power factor is obtained for Sm0.8Co4Sb12 synthesized at 2 GPa and 900 K.