位置：成果数据库 > 期刊 > 期刊详情页
Resistive switching memory effect of ZrO2 films with Zr+ implanted
  • 时间：0
  • 相关项目：基于射频单电子晶体管的微纳机械器件研究
同期刊论文项目
基于射频单电子晶体管的微纳机械器件研究
期刊论文 24 会议论文 11 著作 1
同项目期刊论文
基于I-V特性的阻变存储器的阻变机制研究
Charge storage characteristics of hydrogenated nanocrystalline silicon film prepared by rapid therma
Modeling of Retention Characteristics for Metal and Semiconductor Nanocrystal Memories
Surface-induced large side-gating phenomenon in GaAs quantum wire transistors and its removal by sur
On the resistive switching mechanisms of Cu/ZrO2:Cu/Pt
纳米晶非挥发性存储器研究进展
Model to explain the anisotropic phenomenon of effective mobility of organic field-effect transistor
Fabrication and characterization of single electron transistor on SOI
微纳加工技术在微纳电子器件领域的应用
Resistance switching of Au-implanted-ZrO2 film for nonvolatile memory application
Nonpolar nonvolatile resistive switching in Cu doped ZrO2
Resistance switching characteristics of zirconium oxide containing gold nanocrystals for nonvolatile
Fabrication and charging characteristics of MOS capacitor structure with metal nanocrystals embedded
纳米晶浮栅存储器的模拟、制备和电学特性
Unipolar resistive switching of Au^＋-implanted ZrO2 films
阻变式存储器存储机理
X射线光刻和剥离技术制作声表面波叉指换能器
Charge storage characteristics of hydrogenated nanocrystalline silicon film prepared by rapid thermal annealing