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Charge storage characteristics of hydrogenated nanocrystalline silicon film prepared by rapid thermal annealing
  • ISSN号：1674-1056
  • 期刊名称：《中国物理B：英文版》
  • 时间：0
  • 分类：TQ127.11[化学工程—无机化工] TN248.4[电子电信—物理电子学]
  • 作者机构：[1]Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
  • 相关基金：Project partially supported by the National Basic Research Program of China （Grant Nos. 2011CB808404 and 2009CB939703） and the National Natural Science Foundation of China （Grant Nos. 60825403, 90607022, and 61001043）.
作者： 李志刚[1], 龙世兵[1], 刘明[1], 王丛舜[1], 贾锐[1], 闾锦[2], 施毅[2]
关键词： 石墨设备, 载流子密度, 缺陷调查, 射线辐射, 辐射照射, 晶格变形, 应用程序, 辐射环境, graphene,γ ray radiation, Raman spectrum, defects
中文摘要：

Corresponding author. E-mail： liuming@ime.ac.cn

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期刊信息
  • 《中国物理B：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国物理学会和中国科学院物理研究所
  • 主编：欧阳钟灿
  • 地址：北京 中关村 中国科学院物理研究所内
  • 邮编：100080
  • 邮箱：
  • 电话：010-82649026 82649519
  • 国际标准刊号：ISSN：1674-1056
  • 国内统一刊号：ISSN：11-5639/O4
  • 邮发代号:
  • 获奖情况:
  • 国内外数据库收录:
  • 被引量:406