中文摘要：

The influence of the width of a lattice-matched Al 0.82 In 0.18 N/GaN single quantum well (SQW) on the absorption coefficients and wavelength of the intersubband transition (ISBT) has been investigated by solving the Schrdinger and Poisson equations self-consistently.The wavelength of 1-2 ISBT increases with L,the thickness of the single quantum well,ranging from 2.88 μm to 3.59 μm.The absorption coefficients of 1-2 ISBT increase with L at first and then decrease with L,with a maximum when L is equal to 2.6 nm.The wavelength of 1-3 ISBT decreases with L at first and then increases with L,with a minimum when L is equal to 4 nm,ranging from approximately 2.03 μm to near 2.11 μm.The absorption coefficients of 1-3 ISBT decrease with L.The results indicate that mid-infrared can be realized by the Al 0.82 In 0.18 N/GaN SQW.In addition,the wavelength and absorption coefficients of ISBT can be adjusted by changing the width of the SQW.

英文摘要：

The influence of the width of a lattice-matched A10.82In0.18N/GaN single quantum well （SQW） on the absorption coefficients and wavelength of the intersubband transition （ISBT） has been investigated by solving the Schr5dinger and Poisson equations self-consistently. The wavelength of 1-2 ISBT increases with L, the thickness of the single quantum well, ranging from 2.88 ~m to 3.59 ~.m. The absorption coefficients of 1-2 ISBT increase with L at first and then decrease with L, with a maximum when L is equal to 2.6 nm. The wavelength of 1-3 ISBT decreases with L at first and then increases with L, with a minimum when L is equal to 4 nm, ranging from approximately 2.03 p~m to near 2.11 p.m. The absorption coefficients of 1-3 ISBT decrease with L. The results indicate that mid-infrared can be realized by the A10.s2In0.1sN/GaN SQW. In addition, the wavelength and absorption coefficients of ISBT can be adjusted by changing the width of the SQW.