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中文摘要：
利用计算流体力学（CFD）方法对某型立式喷淋式金属有机物化学气相沉积（MOCVD）反应室流场进行了三维数值仿真,研究了影响MOCVD反应室流场结构的各工作参数（流量、温度、压力）的作用机制,并对试制中的MOCVD设备的几何结构及进气方式进行了改进,采用了圆弧形过渡拐角及泊肃叶型入口速度剖面,以形成稳定均匀的流场,从而保证氮化镓（GaN）的生长质量.
英文摘要：
The flow field in metal organic chemical vapor deposition （MOCVD） reactor is simulated three-dimensionally by computational fluid dynamics （CFD） theory. The governing equations are discretized with the finite volume method based on the non-stagger grids system and are solved by the SIMPLE scheme and the improved pressure-velocity method. How the different working parameters affect the flow patterns in the MOCVD reactor is studied in this paper. The geometric structure and inflow pattern of a MOCVD reactor which is under trial-production are improved in order to provide steady and uniform flow field and improve the quality of GaN films.
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