中文摘要：

对比传统的平面型晶体管，总结了三维立体结构FinFET器件的结构特性。结合MOS器件栅介质材料研究进展，分别从纯硅基、多晶硅／高k基以及金属栅／高k基三个阶段综述了Fin—FET器件的发展历程，分析了各阶段FinFET器件的材料特性及其在等比缩小时所面临的关键问题，并着重从延迟时间、可靠性和功耗三方面分析了金属栅／高k基FinFET应用于22nm器件的性能优势。基于短沟道效应以及界面态对器件性能的影响，探讨了FinFET器件尺寸等比缩小可能产生的负面效应及其解决办法。分析了FinFET器件下一步可能的发展方向，主要为高迁移率沟道材料、立体型栅结构以及基于新原理的电子器件。

英文摘要：

The structural properties of the 3D FinFETs are summarized compared with the con- ventional planar transistor. The evolution of the FinFET is reviewed according to the research progress of MOS device gate dielectrics, which includes pure Si, poly-Si/high-k and metal gate/ high-k gate stack, respectively. The key problems of the material properties and scaling in Fin- FET devices at every stage are summarized. The performance advantages of the metal gate/high- k gate FinFETs for the 22 nm node devices are analyzed, such as the delay time, reliability and power consumption. The negative effects and possible solutions of the further scaling in the Fin- FETs are discussed based on the influence of the short channel effects and interface states on the devices. The future development of the FinFETs is analyzed, which mainly consists of the mate- rials with high mobility, 3D gate stack and the electronic device based on new principles.