中文摘要：

用湿法化学刻蚀制备出具有直立结构的硅纳米线,其平均长度为20μm,平均直径100 nm.将该硅纳米线作为电容式电离结构的一维纳米电极,建立场致电离的测试系统,并在常温常压下测试出电离的全伏安特性,得出了一维纳米电极系统气体电离的规律.测试结果表明,利用湿法化学刻蚀制备的硅纳米线作为一维纳米电极,可以大大降低系统的击穿电压,原因在于它具有较高的场增强因子、小尺寸效应以及高的缺陷密度.

英文摘要：

By using method of wet chemical etching,a kind of straight aligned silicon nanowires （SiNWs） was prepared,with average length and diameter about 20μm and 100 nm,respectively. Then 1D SiNWs were used as the nano-electrode of capacitive ionization structure in a test system of ionization,to test the full volt ampere characteristics of ionization.The test results show that the as-grown SiNWs acting as one of the nano-electrode can reduce the breakdown voltage of power system greatly,because the as-grown SiNWs have large field enhancement factor, small size effect and high defect density.