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Ultra-Low Breakdown Voltage of Field Ionization in Atmospheric Air Based on Silicon Nanowires
  • ISSN号:1009-0630
  • 期刊名称:《等离子体科学与技术:英文版》
  • 时间:0
  • 分类:O462.4[理学—电子物理学;理学—物理] TN386.1[电子电信—物理电子学]
  • 作者机构:[1]Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electrical Engineering, East China Normal University, Shanghai 200241, China, [2]School of Electronics and Information, Nantong University, Nantong 226019, China
  • 相关基金:supported by National Natural Science Foundation of China (Nos. 61076070, 61204018); Education Committee of Jiangsu Province of China (No. 11KJB510023); The Science and Technology Project of Nantong, Jiangsu Province of China (No. BK2012039); The NaturalScience Foundation of Nantong University (No. 10Z025)
中文摘要:

Classic field ionization requires extremely high positive electric fields,of the order of a few million volts per centimeter.Here we show that field ionization can occur at dramatically lower fields on the electrode of silicon nanowires(SiNWs)with dense surface states and large field enhancement factor.A field ionization structure using SiNWs as the anode has been investigated,in which the SiNWs were fabricated by improved chemical etching process.At room temperature and atmospheric pressure,breakdown of the air is reproducible with a fixed anode-to-cathode distance of 0.5μm.The breakdown voltage is~38 V,low enough to be achieved by a batterypowered unit.Two reasons can be given for the low breakdown voltage.First,the gas discharge departs from the Paschen’s law and the breakdown voltage decreases sharply as the gap distance falls inμm range.The other reason is the large electric field enhancement factor(β)and the high density of surface defects,which cause a highly non-uniform electric field for field emission to occur.

英文摘要:

Classic field ionization requires extremely high positive electric fields, of the order of a few million volts per centimeter. Here we show that field ionization can occur at dramatically lower fields on the electrode of silicon nanowires (SiNWs) with dense surface states and large field enhancement factor. A field ionization structure using SiNWs as the anode has been investigated, in which the SiNWs were fabricated by improved chemical etching process. At room temperature and atmospheric pressure, breakdown of the air is reproducible with a fixed anode-to-cathode distance of 0.5 μm. The breakdown voltage is -38 V, low enough to be achieved by a batterypowered unit. Two reasons can be given for the low breakdown voltage. First, the gas discharge departs from the Paschen's law and the breakdown voltage decreases sharply as the gap distance falls in μm range. The other reason is the large electric field enhancement factor (β) and the high density of surface defects, which cause a highly non-uniform electric field for field emission to occur.

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期刊信息
  • 《等离子体科学与技术:英文版》
  • 主管单位:中国科学院 中国科协
  • 主办单位:中国科学院等离子体物理研究所 中国力学学会
  • 主编:万元熙、谢纪康
  • 地址:合肥市1126信箱
  • 邮编:230031
  • 邮箱:pst@ipp.ac.cn
  • 电话:0551-5591617 5591388
  • 国际标准刊号:ISSN:1009-0630
  • 国内统一刊号:ISSN:34-1187/TL
  • 邮发代号:
  • 获奖情况:
  • 国内外数据库收录:
  • 美国化学文摘(网络版),荷兰文摘与引文数据库,美国工程索引,美国剑桥科学文摘,美国科学引文索引(扩展库),英国科学文摘数据库
  • 被引量:89