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An XPS study on the chemical bond structure at the interface between SiOxNy and N doped PET
  • ISSN号：0021-9606
  • 期刊名称：Journal of Chemical Physics
  • 时间：2013.3.14
  • 页码：104706-
  • 相关项目：a-SiOxNy薄膜化学键结构与缺陷形成机理的研究
作者： 丁万昱|Li Li|Lina Zhang|Dongying Ju|Shou Peng|Weiping Chai|
同期刊论文项目
a-SiOxNy薄膜化学键结构与缺陷形成机理的研究
期刊论文 15 会议论文 2
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