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自填隙原子对Si晶体性能影响的研究
  • ISSN号：1001-8891
  • 期刊名称：红外技术
  • 时间：0
  • 页码：598-601
  • 分类：O734[理学—晶体学]
  • 作者机构：[1]云南大学光电信息材料研究所,云南昆明650091
  • 相关基金：国家自然科学基金项目,编号：10964016和10990101; 教育部科学技术研究重点项目,编号：210207; 云南大学理工基金项目,编号：2009E27Q
  • 相关项目：硅离子自注入改性硅薄膜发光材料的理论和实验研究
作者： 卜琼琼|王茺|靳映霞|陆顺其|杨宇|BU Qiong-qiong,WANG Chong,JIN Ying-xia,LU Shun-qi,|
关键词： 第一性原理, 缺陷, 硅基, 光学性质, first-principles, defect, silicon, optical properties
中文摘要：

运用第一性原理的超软赝势方法研究了Si晶体中自填隙形成的多种缺陷对体Si电子结构和光学性质的影响。理论计算表明,缺陷使体Si材料的晶格常数、体积、电学和光学性质等产生了不同程度的改变,空位缺陷导致Si晶体材料吸收光谱红移。

英文摘要：

The electronic structures and optical properties of all kinds of defect caused by self-ion interstitial in silicon have been studied using the first principle with ultra-soft pseudopotentials. The calculated results show that lattice parameter, volume, electronic and optical properties have been changed with different defects. Furthermore, the red shift of absorption spectrum has been observed due to the vacancy.

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硅离子自注入改性硅薄膜发光材料的理论和实验研究
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期刊信息
  • 《红外技术》
  • 北大核心期刊（2011版）
  • 主管单位:中国兵器工业集团公司
  • 主办单位:昆明物理研究所 中国兵工学会夜视技术专业委员会 微光夜视技术重点实验室
  • 主编：苏君红
  • 地址：昆明市教场东路31号
  • 邮编：650223
  • 邮箱：irtek@china.com
  • 电话：0871-5105248
  • 国际标准刊号：ISSN：1001-8891
  • 国内统一刊号：ISSN：53-1053/TN
  • 邮发代号:64-26
  • 获奖情况:
  • 2006兵器集团一等奖,2004、2009年云南省优秀期刊
  • 国内外数据库收录:
  • 荷兰文摘与引文数据库,日本日本科学技术振兴机构数据库,中国中国科技核心期刊,中国北大核心期刊（2004版）,中国北大核心期刊（2008版）,中国北大核心期刊（2011版）,中国北大核心期刊（2014版）,中国北大核心期刊（2000版）
  • 被引量:8096