欢迎您！东篱公司
退出
-
申报数据库
-
立项数据库
-
成果数据库
-
项目获奖数据库
中文摘要：
采用离子束溅射技术,通过改变Ge的沉积量,在n型Si（100）衬底上自组装生长了一系列Ge量子点样品.利用AFM和Raman光谱对样品表面形貌和结构进行表征,系统地研究了Ge量子点形貌、密度、尺寸大小以及Ge的结晶性和量子点中组分等随Ge沉积量的演变规律.结果表明：Ge层从二维薄层向三维岛过渡过程中,没有观察到传统的由金字塔形向圆顶形量子点过渡,而是直接呈圆顶形生长;且随着Ge沉积量的增加,量子点密度先增大后减小,Ge的结晶性增强同时Ge/Si互混加剧,量子点中Si的组分增加.
英文摘要：
A series of Ge quantum dot samples with different Ge thickness is grown on n-Si（100） substrates by ion beam sputtering. Their morphology and structure are characterizated using AFM and Raman spectra, in which the evolution of the morphology, density, dimension, crystalline, and composition of the Ge quantum dots are discussed in detail. The results show that after the growth mode transiting from 2-D to 3-D, the shape of the Ge quantum dot changes directly into a dome shape and no pyramid dots are observed. Besides, with the increase of the Ge deposition, the density of the quantum dots increases to a maximum and then decreases, the crystalline becomes better, but the Ge/Si alloying processing is enhanced and the Ge composition decreases in quantum dots at the same time.
同期刊论文项目
同项目期刊论文
Hydrogen passivation and multiple hydrogen-Hg vacancy complex impurities (nH-V(Hg), n=1,2,3,4) in Hg
Polarity inversion and couplingof laser beam induced current in As-doped long-wavelength HgCdTe infr
Laser Power and Temperature Dependence on Laser Beam Induced Current Signal in As-doped p-type HgCdT
Studies on structures, electronic and magnetic properties of TM-doped InnSbn (n=7-12,14,16) clusters
Gold nanoparticle surface deposition induced quantum efficiency enhancement for Si-multipixel photon
Towards ultra small noble metal nanoparticles: testing Jellium model for ligand protected copper and
Effects of absorption layer characteristic on spectral photoresponse of mid-wavelength InSb photodio
Heping，Polarization properties of surface plasmon enhanced photoluminescence from a single Ag nanowi
Heping，Characterization of elliptically polarized femtosecond pulses by molecular-alignment-based fr
Measurement of molecular polarizability anisotropy via alignment-induced spatial focusing and defocu
Growth of Ge quantum dot at the mix-crystal interface self-induced on the ion beam sputtering deposi
Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown unde
Effects of uniaxial strain on magnetic interactions in Co-doped ZnO nanowires: First-principles calc
Morphology and shape dependent characteristics of InAs/InP(100) quantum dot lasers grown by gas sour
Intersubband transitions at atmospheric window in AlxGa1-xN/GaN multiple quantum wells grown on GaN/
Structural Stability and Electronic Properties of InAs Nanowires and Nanotubes: Effects of Surface a
The collective property of enhanced transmission through compound metal periodic arrays of subwavele
Polarity inversion and coupling of laser beam induced current in As-doped long-wavelength HgCdTe inf
Coupling of localized surface plasmon modes in compound structure with metallic nanoparticle and nan
Temperature dependence on photosensitive area extension in mercury cadmium telluride photodiodes usi
Effect of Electrodes on Geometric and Transport Properties of the Graphene-Based Nanomolecular Devic
Different strain relief behaviors in Al(0.35)Ga(0.65)N/GaN multiple quantum wells on GaN/Sapphire te
The Finite-Size Effect on the Transport Properties in Edge-Modified Graphene Nanoribbon-Based Molecu
Underlying strain-induced growth of the self-assembled Ge quantum-dots prepared by ion beam sputteri
Scalable Integration of Indium Zinc Oxide/Photosensitive-Nanowire Composite Thin-Film Transistors fo
The localized near-field enhancement of metallic periodic bowtie structure: An oscillating dipoles p
Heping，Comparison of frequency-resolved optical polarization gating induced by molecular alignment a
Droop improvement in blue InGaN/GaN multiple quantum well light-emitting diodes with indium graded l
Origin of the redshift of the luminescence peak in InGaN light-emitting diodes exposed to Co-60 gamm
An Improvement on the Junction Temperature Measurement of Light-Emitting Diodes by using the Peak Sh
Efficiency enhancement of blue InGaN/GaN light-emitting diodes with an AlGaN-GaN-AlGaN electron bloc
期刊信息
位置：