位置：成果数据库 > 期刊 > 期刊详情页
Si^＋自注入Si晶体中缺陷分布的计算模拟
  • ISSN号：1001-8891
  • 期刊名称：《红外技术》
  • 时间：0
  • 分类：TN213[电子电信—物理电子学]
  • 作者机构：[1]云南大学光电信息材料研究所,云南昆明650091
  • 相关基金：国家自然科学基金项目 编号：10964016和10990101; 教育部科学技术研究重点项目 编号：210207; 云南大学理工基金项目 编号：2009E27Q
作者： 周原[1], 韦冬[1], 王茺[1], 杨宇[1]
关键词： SRIM程序, Si+, 自注入, W缺陷, D1线, SRIM, Si＋, Self-ion implantation, W line, D1 line
中文摘要：

在两体近似碰撞模型基础上,采用SRIM程序对自注入硅离子及其造成的损伤在样品的分布进行了研究,模拟了Si＋自注入Si晶体的Si＋深度分布几率和注入时的能量传递。计算结果表明：在相同注入能量的情况下,注入Si＋的分布概率是恒定的,在注入过程中电离能是阻止Si＋进一步深入的主导因素。论文还初步讨论了注入剂量和退火温度对发光强度的影响,以及W缺陷的可能形成原因。

英文摘要：

Based on the binary collision approximation（BCA）,the defect distribution in the self-ion implantation and its energy transfer in Si crystal had been investigated by using the SRIM program.The calculated results indicated that the distribution probability of implanted Si＋ is constant in the crystal Si,if the implantation energies are the same.The dominating factor which stops the implanted Si＋ further deepening is demonstrated to be the value of the ionization energy.In this paper,the effects of implanted does and annealing temperature on the photoluminescence intensity and the origin of W defect were well discussed.

同期刊论文项目
红外单光子探测新方法与应用
期刊论文 52 会议论文 25 获奖 2
硅离子自注入改性硅薄膜发光材料的理论和实验研究
期刊论文 32 会议论文 3
同项目期刊论文
Sub-bandgap luminescence centers in silicon created by self-ion implantation and thermal annealing
硅离子注入SOI晶片中发光研究
Ge在Si(100)-2×1表面化学吸附的第一性原理研究
温度对离子束溅射生长Ge/Si量子点的形貌影响
Si~+自注入Si晶体中缺陷分布的计算模拟
Study on the defect-related emissions in the light self-ion-implanted Si films by a silicon-on-insul
离子注入诱导硅材料发光的研究进展
硅缺陷发光的研究概况
Photoluminescence evolution in self-ion-implanted and annealed silicon
Red Light Emission from Silicon Created by Self-ion Implantation and Thermal Annealing
离子束溅射Ge量子点的应变调制生长
离子束溅射自组装Ge/Si量子点生长的演变
自填隙原子对Si晶体性能影响的研究
绝缘氧化层上自离子注入Si薄膜W线发光性能的调控
Observation on photoluminescence evolution in 300 keV self-ion implanted and annealed silicon
束流密度对Ge/Si量子点溅射生长的影响
斜切基片上溅射生长高密度小尺寸Ge纳米点的研究
溅射气压对Ge/Si纳米点表面形貌的影响
温度对SiO_2表面上磁控溅射制备Ge纳米点的生长模式和尺寸的影响
离子注入诱导硅材料发光的研究进展
Molecular-alignment-assisted high-energy supercontinuum pulse generation in air
Broadband near-infrared luminescence from transparent glass-ceramics containing Ni2+-doped SrTiO3 na
Characterization of elliptically polarized femtosecond pulses by molecular-alignment-based frequency
Synchronized Fiber Lasers for Efficient Coincidence Single-Photon Frequency Upconversion
Efficient mid-infrared single-photon frequency upconversion detection with ultra-low background coun
Fabrication of nitrogen vacancy color centers by femtosecond pulse laser illumination
Generation of multicolor vacuum ultraviolet pulses through four-wave sum-frequency mixing in argon
Experimental demonstration of counterfactual quantum key distribution
Direct retrieval of Kerr and plasma effects from alignment-induced spatiotemporal modulation
Laser ranging at 1550 nm with 1-GHz sine-wave gated InGaAs/InP APD single-photon detector
Enhanced Photoluminescence of Single-Photon Emitters in Nanodiamonds on a Gold Film
Room-Temperature Single-Photon Detector Based on InGaAs/InP Avalanche Photodiode With Multichannel C
Molecular wakes for ultrashort laser pulses
Linear External Optical Gain Photodetector at Few-Photon Level
Low-noise high-speed InGaAs/InP-based single-photon detector
Optically Self-Balanced InGaAs-InP Avalanche Photodiode for Infrared Single-Photon Detection
Generation of correlated UV and visible rainbows
Plasma waveguide array induced by filament interaction
Attraction and repulsion of parallel femtosecond filaments in air
热退火诱导C^＋注入Si晶体的蓝光发射
镶嵌在SiO_2基体中SiC纳米晶的紫外光致发光
两步法溅射中缓冲层厚度对Ge薄膜质量的影响
Study on the defect-related emissions in the light self-ion-implanted Si films by a silicon-on-insulator structure
Ge／Si量子点生长的研究进展
Ge 组分对应变 Si1-x Gex 沟道 P-MOSFET 电学特性影响
沉积温度和生长停顿对离子束溅射生长Ge/Si多层膜的影响
Field-free molecular orientation by femtosecond dual-color and single-cycle THz fields
Phase noise suppression for a high-power optical frequency comb
自填隙原子对Si晶体性能影响的研究
Time-dependent photon number discrimination of InGaAs/InP avalanche photodiode single-photon detecto
Elongation of femtosecond filament by molecular alignment in air
Electronic control of nonlinear-polarization-rotation mode locking in Yb-doped fiber lasers
Enhanced ultraviolet pulse generation via dual-color filament interaction induced phase-matching con
Ultrasensitive mid-infrared up-conversion imaging at few-photon level
High-power nanosecond ytterbium-doped fiber laser passively synchronized with a femtosecond Ti:sapph
Enhanced fluorescence emission of helium atoms by seeded optically driven impact excitation
Impact excitation of neon atoms by heated seed electrons in filamentary plasma gratings
Temporal and spectral control of single-photon frequency upconversion for pulsed radiation
Direct measurement of field-free molecular alignment by spatial (de)focusing effects
Comparison of frequency-resolved optical polarization gating induced by molecular alignment and Kerr
Verification of the physical mechanism of THz generation by dual-color ultrashort laser pulses
温度对SiO_2表面上磁控溅射制备Ge纳米点的生长模式和尺寸的影响
Nonlinear polarization rotation-induced pulse shaping in a stretched-pulse ytterbium-doped fiber laser
期刊信息
  • 《红外技术》
  • 北大核心期刊（2011版）
  • 主管单位:中国兵器工业集团公司
  • 主办单位:昆明物理研究所 中国兵工学会夜视技术专业委员会 微光夜视技术重点实验室
  • 主编：苏君红
  • 地址：昆明市教场东路31号
  • 邮编：650223
  • 邮箱：irtek@china.com
  • 电话：0871-5105248
  • 国际标准刊号：ISSN：1001-8891
  • 国内统一刊号：ISSN：53-1053/TN
  • 邮发代号:64-26
  • 获奖情况:
  • 2006兵器集团一等奖,2004、2009年云南省优秀期刊
  • 国内外数据库收录:
  • 荷兰文摘与引文数据库,日本日本科学技术振兴机构数据库,中国中国科技核心期刊,中国北大核心期刊（2004版）,中国北大核心期刊（2008版）,中国北大核心期刊（2011版）,中国北大核心期刊（2014版）,中国北大核心期刊（2000版）
  • 被引量:8096