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中文摘要：
采用低温缓冲层技术制备Ge薄膜,利用AFM和Raman光谱研究缓冲层厚度对低温Ge缓冲层残余应变弛豫的影响。实验结果显示：随着缓冲层厚度的增加,残余应变弛豫度增大。在30 nm厚的低温Ge缓冲层上生长800nm厚的Ge外延层。Ge薄膜具有良好的结晶性,表面粗糙度RMS为2.06 nm。
英文摘要：
Base on low temperature buffer layer method, the Ge thin film has been deposited on Si substrate with the radio-frequency magnetron sputtering. The varied thicknesses of low-temperature Ge buffer layers were characterized by AFM and Raman spectroscopy. The residual strain relaxation in the buffer layer was studied. The experimental results indicated that along with the increase of buffer layer thickness, the residual strain relaxation increased. The Ge epitaxial film which was 800 nm thick grown on 30 nm thickness buffer layer shown low surface roughness and good crystallization quality. The root- mean-square surface roughness of the Ge thin film was 2.06 nm.
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