采用高功率脉冲磁控放电等离子体注入与沉积(HPPMS-PIID)和常规直流磁控溅射复合的方法设计制备了包含高结晶度的CrN纳米粒子的DLC薄膜,并对不同C靶电流时制备的CrN-DLC薄膜的形貌、结构及性能进行了研究.结果表明,随C靶电流的增加,薄膜中的含C量增加,在较高的C含量时形成了明显的DLC薄膜特征,掺杂相主要成分为高度200择优取向的CrN纳米晶,其最小晶粒尺寸为42.39 nm.薄膜中的C主要以C-sp~2,C-sp~3和CN-sp~3键的形式存在,sp~3键的总含量为sp~2总含量的44.8%.所制备的薄膜具有很好的膜基结合力(临界载荷Lc=66.8 N)和较高的纳米硬度(最高达24.3 GPa).
DLC films with dispersed high crystallinity CrN nanoparticles were prepared by high power pulsed magnetron discharge plasma ion implantation deposition(HPPMS-PIID) combined with DC magnetron sputtering(DCMS).The surface morphology,structure and properties of CrN-DLC films with the different currents of C target were studied.The results show that the C content increases as the raise of the current of the C target and clear characteristics of DLC films are found at a higher C content.CrN doped in DLC exists as nanoparticles with highly 200 preferred orientation, and the smallest size of the CrN grains is 42.39 nm.The C1s peak primarily consists of the three peaks that correspond to C-sp~2,C-sp~3 and CN-sp~3,and the ratio of total sp~3 to sp~2 is 44.8%.Excellent adhesion between film and substrate with critical load of 66.8 N and high nanohardness up to 24.3 GPa are achieved due to highly energetic ion bombardment and implantation in HPPMS-PIID.