中文摘要：

Transparent conductive oxide ZnSnO3 films were prepared by radio-frequency magnetron sputtering from powder targets and were characterized by X-ray photoelectron spectroscopy,X-ray diffraction,transmission electron microscopy,atomic force microscopy,surface profile,UV–Vis spectroscopy,and Hall effect.The structures of the films were either amorphous or nanocrystalline depending on sputtering parameters including deposition time,target power,chamber pressure,and the target–substrate separation.The average transmittance of the ZnSnO3 films within the visible wavelength was approximately 80%and the resistivity of the ZnSnO3 films was in the range of 10-3–10-4X cm.The structural,optical,and electrical properties of the ZnSnO3 films could be adjusted and regulated by optimizing the sputtering process,allowing materials with specific properties to be designed.

英文摘要：

Transparent conductive oxide ZnSnO3 films were prepared by radio-frequency magnetron sputtering from powder targets and were characterized by X-ray photoelectron spectroscopy, X-ray diffraction, transmission electron microscopy, atomic force microscopy, surface profile, UV-Vis spectroscopy, and Hall effect. The structures of the films were either amorphous or nanocrystalline depending on sputtering parameters including deposition time, target power, chamber pressure, and the target-substrate separation. The average transmittance of the ZnSnO3 films within the visible wavelength was approximately 80% and the resistivity of the ZnSnO3 films was in the range of 10^-3-10^-4 Ω cm. The structural, optical, and electrical properties of the ZnSnO3 films could be adjusted and regulated by optimizing the sputtering process, allowing materials with specific properties to be designed.