中文摘要：

基于实验测试数据，综合分析了栅源、栅漏串联电阻增大后电流崩塌Ⅰ-Ⅴ曲线变化差异。研究表明：在脉冲测试条件下，RS增大，栅下沟道开启程度减弱，漏电流如变小；RD增大，栅下沟道漏端等效漏电压减小，膝电压VKNEE变大。该实验结果可望通过RD与RS表征研究导致GaN HEMT电流崩塌的表面态变化。

英文摘要：

Based on the measurement results, Ⅰ-Ⅴ characteristics before and after gate-souree resistance and gate-drain resistance increased were compared. Increasing of gate-source resistance leads pinch-off of the channel, which makes saturated current decrease. The increasing of gate-drain large resistance reduces effective drain voltage of the consequently. This result is thought to describe the intrinsic channel, knee voltage becomes current collapse after stress quantitively.