中文摘要：

采用脉冲测试方法研究了与GaN基HEMT电流崩塌相关的表面陷阱效应。对特制的无台面器件进行的实验证实了表面陷阱之间存在输运过程。数据表明,当栅应力持续时间足够长时,被充电的表面陷阱会达到某种稳态。该稳态是包含了陷阱俘获与释放过程的动态平衡态。

英文摘要：

The surface traping process related to current collapes in GaN based HEMT is investigated by a new measurement method.A special AlGaN/GaN HEMT without mesa fabrication is designed for this study.the experimental results confirm the existence of the surface transport process.The data analysis indicates that there is a dynamic equilibrium of the chraged surface while the stress is applied for enough time.