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表面态对GaN HEMT电流崩塌效应影响的研究
  • ISSN号:1671-4776
  • 期刊名称:《微纳电子技术》
  • 时间:0
  • 分类:TN713[电子电信—电路与系统]
  • 相关基金:Supported by the National Nature Science Foundation(No. 60072004)and the University Postgraduate Station Foundation of China(No.2000061402)
中文摘要:

In order to realize accurate bilinear transformation from s- to z-domain,a novelswitched-capacitor configuration is proposed in the light of principles of dual-rate sampling and chargeconservation,which has also been used for building a 5th-order elliptic lowpass filter.The filter issimulated and measured in typical 0.34 μm/3.3 V Si CMOS process models,special full differentialoperational amplifiers and CMOS transfer gate switches,which achieves 80 MHz sampling rate,17.8MHz cutoff frequency,0.052 dB maximum passband ripple,42.1 dB minimum stopband attenuation and74 mW quiescent power dissipation.At the same time,the dual-rate sampling topology breaks thetraditional restrictions of filter introduced by unit-gain bandwidth and slew rate of operational amplifiersand also improves effectively their performances in high-frequency applications.It has been applied forthe design of an anti-alias filter in analog front-end of video decoder IC with 15 MHz signal frequencyyet.

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期刊信息
  • 《微纳电子技术》
  • 中国科技核心期刊
  • 主管单位:中国电子科技集团公司
  • 主办单位:中国电子科技集团公司第十三研究所
  • 主编:李和委
  • 地址:石家庄市179信箱46分箱
  • 邮编:050002
  • 邮箱:wndz@vip.sina.com
  • 电话:0311-87091487
  • 国际标准刊号:ISSN:1671-4776
  • 国内统一刊号:ISSN:13-1314/TN
  • 邮发代号:18-60
  • 获奖情况:
  • 2002-2003和2003-2004年度,均获信息产业部电子科...,2005-2006年度获信息产业部电子科技期刊学术技术...,中国学术期刊执行(光盘版)检索与评价数据规范优...,2007-2008年度又荣获工业和信息化部电子科技期刊...
  • 国内外数据库收录:
  • 俄罗斯文摘杂志,美国剑桥科学文摘,英国科学文摘数据库,中国中国科技核心期刊,中国北大核心期刊(2008版),中国北大核心期刊(2011版),中国北大核心期刊(2014版)
  • 被引量:3327