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GaN Films Grown on Si (111) Substrates Using a Composite Buffer with Low Temperature AlN Interlayer
  • ISSN号：0256-307X
  • 期刊名称：Chinese Physics Letters
  • 时间：2014.2
  • 页码：-
  • 相关项目：III族氮化物中极化诱导掺杂效应的物性研究及其应用验证
作者： Jiang Yang|Deng Zhen|Zuo Peng|Chen Hong|
同期刊论文项目
III族氮化物中极化诱导掺杂效应的物性研究及其应用验证
期刊论文 21
同项目期刊论文
Indium segregation measured in InGaN quantum well layer 
Modulating emission intensity of GaN-based green light emitting diodes on c-plane sapphire
Enhancing the quantum efficiency of InGaN yellow-green light-emitting diodes by growth interruption
Effect of InGa1−N “continuously graded” buffer layer on InGaN epilayer
Improvement on InGaN-based light emitting diodes using p-GaN layer grown at low temperature in full
Effect of Stair-Case Electron Blocking Layer on the Performance of Blue InGaN Based LEDs
A novel wavelength-adjusting method in InGaN-based light-emitting diodes
A novel method to reduce the period limitation in laser interference lithography
Realization of high-luminousefficiency InGaN light-emitting diodes in the “green gap” range
Efficiency enhancement of InGaN/GaN multiple quantum wells with graphene layer
Temperature-dependent photoluminescence in light-emitting diodes
Improvement of light power and efficiency droop in GaN-based LEDs using graded InGaN hole reservoir
一种简单高效的制备硅纳米孔阵结构的方法
MBE growth of high absorption mid-IR type-II InAs/GaSb superlattices
Effect of InxGal-xN ＂continuously graded＂ buffer layer on InGaN epilayer grown by metalorganic chemical vapor deposition
Fabrication of GaN-based LEDs with 22° undercut sidewalls by inductively coupled plasma reactive ion etching＊
Influence of Si doping on the structural and optical properties of InGaN epilayers
Fabrication of large-area nano-scale patterned sapphire substrate with laser interference lithography
期刊信息
  • 《中国物理快报：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国科学院物理研究所、中国物理学会
  • 主编：
  • 地址：北京中关村中国科学院物理研究所内（北京603信箱《中国物理快报》编辑部）
  • 邮编：100080
  • 邮箱：cpl@aphy.iphy.ac.cn
  • 电话：010-82649490 82649024
  • 国际标准刊号：ISSN：0256-307X
  • 国内统一刊号：ISSN：11-1959/O4
  • 邮发代号:
  • 获奖情况:
  • 中国期刊方阵“双高”期刊
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  • 被引量:190