中文摘要：

In this paper,we present the simulation and fabrication of a thin film bulk acoustic resonator（FBAR）.In order to improve the accuracy of simulation,an improved Mason model was introduced to design the resonator by taking the coupling effect between electrode and substrate into consideration.The resonators were fabricated by the eight inch CMOS process,and the measurements show that the improved Mason model is more accurate than a simple Mason model.The Qs（Q at series resonance）,Qp（0 at parallel resonance）,Qmax and kt2 of the FBAR were measured to be 695,814,1049,and 7.01%respectively,showing better performance than previous reports.

英文摘要：

In this paper, we present the simulation and fabrication of a thin film bulk acoustic resonator （FBAR）. In order to improve the accuracy of simulation, an improved Mason model was introduced to design the resonator by taking the coupling effect between electrode and substrate into consideration. The resonators were fabricated by tile eight inch CMOS process, and the measurements show that the improved Mason model is more accurate than a simple Mason model. The Qs （Q at series resonance）, Qp （Q at parallel resonance）, Qmax and k2 of the FBAR were measured to be 695, 814, 1049, and 7.01% respectively, showing better performace than previous reports.