中文摘要：

为优化ZnO：Ti复合薄膜制备工艺，采用射频磁控溅射法在不同氧氩比条件下沉积ZnO：Ti复合薄膜，得到的样品经由EDS能谱仪检测Ti掺杂质量分数为3％．分别利用台阶仪、扫描电子显微镜、X线衍射仪、分光光度计和霍尔效应仪对样品的沉积速率、微观结构和光电性能进行表征．结果表明：随着氧氩比逐渐增大，薄膜的沉积速率呈现先增加后减小的变化．所有ZnO：Ti薄膜均为六角纤锌矿结构，具有（002）晶面择优取向；当氧氩比为1：1时，薄膜样品的表面形貌和结构优于其他样品．经过在空气中500℃的退火处理，薄膜样品的结晶质量明显提高．所有ZnO：Ti薄膜在可见光区透过率均大于90％．随着氧氩比的增加，薄膜样品的电阻率先减小后增加，当氧氩比为1：1时，电阻率最小，为6．5×10^-4Ω·cm，薄膜的综合性能达到最优．

英文摘要：

In order to optimize the fabrication process, ZnO ： Ti composite films were deposited by r.f. magnetron sputtering at different oxygen/argon ratios, which had 3% Ti-doping according to the results of EDS analysis. The deposition rate, micro- structure and photoelectric properties were investigated by profiler, scanning electronic microscopy （SEM）, X-ray diffraction （XRD）, spectrophotometer and a Hall effect tester respectively. The results show that the deposition rate of the films first in- creases and then decreases with increasing oxygen/argon ratio. All ZnO ： Ti films have a hexagonal wurtzite structure with the （002） plane preferred; the as-deposited films with optimized morphology and microstructure are obtained at oxygen/argon ra- tio of 1 ： 1. Crystalline structure of the films can be greatly improved by annealing at 500 ℃ in the atmosphere. The transmit- tance of all ZnO ： Ti films is higher than 90%. The electrical resistance first decreases and then increases with increasing oxy- gen/argon ratio. The minimum resistance is 6.5×10^-4Ω·cm for the rims that have optimized comprehensive properties when oxygen/ar-gon ratio is 1 ： 1.