中文摘要：

用非平衡格林函数方法研究一种自旋场效应晶体管的电子输运特性。结果表明，不考虑自旋散射的作用，当漏极电压比较小时该器件能达到很高的磁阻比率。对该器件在考虑自旋散射和不考虑自旋散射下的输出电流进行对比，发现在铁磁平行（反平行）的条件下，考虑自旋散射时的输出电流要比不考虑自旋散射时的输出电流小（大）。研究结果揭示了该器件的物理机制，为该器件的优化设计提供了理论指导。

英文摘要：

The electronic transport properties of a spin field effect transistor （spinFET） is theoretically investigated by using Non-Equilibrium Green＇s Function （NEGF）. The results show that the device can get a very high magneto resistance （MR） ratio without spin scattering when drain voltage is small. The output current of the device without spin scattering is calculated and is compared with that of considering the effect of spin scattering. We notice that the output cur- rent in the device with spin scattering is smaller （larger） than that without spin scattering in the parallel （anti-parallel） configuration. The physical mechanism of the device is disclosed, which provides the theoretical guidance for the optimum design of the spinFET.