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InAs/InGaAs digital alloy strain-compensated quantum well lasers
  • ISSN号：1001-9014
  • 期刊名称：Journal of Infrared and Millimeter Waves
  • 时间：2014.6
  • 页码：213-217
  • 相关项目：基于InP基异变缓冲层的3微米波长新结构激光器研究
作者： Fang Xiang|Li Ai-Zhen|Zhou Li|Li Hao-Si-Bai-Yin|
同期刊论文项目
基于InP基异变缓冲层的3微米波长新结构激光器研究
期刊论文 37 会议论文 1
同项目期刊论文
InP-based InxGa1-xAs metamorphic buffers with different mismatch grading rates
2.7 um InAs quantum well lasers on InP-based InAlAs metamorphic buffer layers
InAs/In0.83Al0.17As quantum wells on GaAs substrate with type-I emission at 2.9 um
Effects of growth temperature and buffer scheme on characteristics of InP-based metamorphic InGaAs p
Effects of well widths and well numbers on InP-based triangular quantum well lasers beyond 2.4μm
Optimization of InAlAs buffers for growth of GaAs-based high indium content InGaAs photodetectors
Fabrication of column shape two dimensional photonic crystals: double developments in holographic li
Effects of material parameters on the temperature dependent spectral response of In0.83Ga0.17As phot
2.4 um InP-based antimony-free triangular quantum well lasers in continuous-wave operation above roo
Structural and optical characterizations of InPBi thin films grown by molecular beam epitaxy
Type-I mid-infrared InAs/InGaAs quantum well lasers on InP-based metamorphic InAlAs buffers
Optical properties of InGaAsBi/GaAs strained quantum wells studied by temperature-dependent photolum
Absorption coefficients of In0.8Ga0.2As at room temperature and 77K
Effects of compositional overshoot on InP-based InAlAs metamorphic graded buffer
Analysis and evaluation of uniformity of SWIR InGaAs FPA - Part II: Processing issues and overall ef
Performance of gas source MBE grown InAlGaAs photovoltaic detectors tailored to 1.4 um
GaAs-based In0.83Ga0.17As photodetector structure grown by gas source molecular beam epitaxy
Evaluation of the performance correlated defects of metamorphic InGaAs photodetector structures thro
Improved Performance of 2.2-mu m InAs/InGaAs QW Lasers on InP by Using Triangular Wells
Dark current characteristics of GaAs-based 2.6 um InGaAs photodetectors on different types of InAlAs
Tailoring the performances of low operating voltage InAlAs/InGaAs avalanche photodetectors
Correction of response spectra of quantum type photodetectors measured by FTIR
Dark current suppression in metamorphic In0.83Ga0.17As photodetectors with In0.66Ga0.34As/InAs super
Effects of continuously graded or step-graded InxAl1？xAs buffer on the performance of InP-based In0.
Effect of bismuth surfactant on InP-based highly strained InAs/InGaAs triangular quantum wells
Carrier scattering and relaxation dynamics in n-type In0:83Ga0:17As as a function of temperature and
Low voltage and small gain slope InAlAs/InGaAs avalanche photodiodes with a moderate p-doped multipl
InP-based type-I quantum well lasers up to 2.9 μm at 230 K in pulsed mode on a metamorphic buffer
InP-based Inx Ga1-xAs metamorphic buffers with different mismatch grading rates
全息光刻和二次显影法制备柱形二维光子晶体
InAs/InGaAs数字合金应变补偿量子阱激光器
FTIR测量的量子型光电探测器响应光谱校正
期刊信息
  • 《红外与毫米波学报》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国科学院上海技术物理研究所 中国光学学会
  • 主编：褚君浩
  • 地址：上海市玉田路500号
  • 邮编：200083
  • 邮箱：jimw@mail.sitp.ac.cn
  • 电话：021-25051553
  • 国际标准刊号：ISSN：1001-9014
  • 国内统一刊号：ISSN：31-1577/TN
  • 邮发代号:4-335
  • 获奖情况:
  • 1992、1996年获全国优秀学术期刊一等奖,1999年首届国家期刊奖
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  • 被引量:8778