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Optimization of InAlAs buffers for growth of GaAs-based high indium content InGaAs photodetectors
  • ISSN号：0022-0248
  • 期刊名称：Journal of Crystal Growth
  • 时间：2015.9.1
  • 页码：346-350
  • 相关项目：基于InP基异变缓冲层的3微米波长新结构激光器研究
作者： Z.X. Guo|L. Zhou|A.Z. Li|Hsby. Li|
同期刊论文项目
基于InP基异变缓冲层的3微米波长新结构激光器研究
期刊论文 37 会议论文 1
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