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GaAs-based In0.83Ga0.17As photodetector structure grown by gas source molecular beam epitaxy
  • ISSN号：0022-0248
  • 期刊名称：Journal of Crystal Growth
  • 时间：2014.5.1
  • 页码：75-80
  • 相关项目：基于InP基异变缓冲层的3微米波长新结构激光器研究
作者： Zhou, L.|Cao, Y. Y.|Fang, X.|Li, Hsby|
同期刊论文项目
基于InP基异变缓冲层的3微米波长新结构激光器研究
期刊论文 37 会议论文 1
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